发明名称 |
METHOD OF FORMING CONTACT AND SEMICONDUCTOR DEVICE |
摘要 |
A method of forming a contact is provided. A substrate having at least two metal oxide semiconductor devices is provided and a gap is formed between the two devices. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and the substrate. The first stress layer is formed by first forming a first stress material layer over the substrate to cover the metal-oxide semiconductor devices and to fill the gap, wherein the stress material inside the gap has a seam. An etching back process is then performed to remove a portion of the stress material layer inside the gap. A second stress layer and a dielectric layer are sequentially formed on the first stress layer. A portion of the second stress layer is removed to form a contact opening. A second conductive layer is filled into the contact opening to form a contact.
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申请公布号 |
US2007117370(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20050164481 |
申请日期 |
2005.11.24 |
申请人 |
CHEN NENG-KUO;TSAI TENG-CHUN;HUANG CHIEN-CHUNG |
发明人 |
CHEN NENG-KUO;TSAI TENG-CHUN;HUANG CHIEN-CHUNG |
分类号 |
H01L21/4763;H01L23/48 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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