METHOD OF FORMING NON-VOLATILE MEMORY CELL USING SACRIFICIAL PILLAR SPACERS AND NON-VOLATILE MEMORY CELL FORMED ACCORDING TO THE METHOD

摘要

A method of forming a icroelectronic non-volatile memory cell (200) , a memory-cell formed according to the method, and a system including the memory cell. The method comprises: providing a substrate (206) , providing a pair of spaced apart isolation bodies (201) on the substrate, the isolation bodies including respective raised isolation portions (222) , providing the pair comprising providing a buffer layer (221) on the substrate; providing pillar spacers (224) on side walls of the raised isolation portions; removing the buffer layer after providing the pillar spacers; removing the pillar spacers during removing the buffer layer; providing a tunnel dielectric (204) on the surface of the substrate after removing the buffer layer; providing a floating gate (202) on the tunnel dielectric; a reducing a height of the isolation bodies to yield corresponding isolation regions; providing source and drain regions on opposite sides of the floating gate,- providing an interpoly dielectric (208) on the floating gate; and providing a control gate (210) on the interpoly dielectric to yield the memory cell.