发明名称 METHODS AND SYSTEMS FOR MEASURING A CHARACTERISTIC OF A SUBSTRATE OR PREPARING A SUBSTRATE FOR ANALYSIS
摘要 Methods and systems for measuring a characteristic of a substrate (90) or preparing a substrate (90) for analysis are provided. One method for measuring a characteristic of a substrate (90) includes removing a portion of a feature on the substrate (90) using an electron beam (110) to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate (90) for analysis includes removing a portion of a material on the substrate (90) proximate to a defect using chemical etching (88) in combination with an electron beam (110). The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate (90) for analysis includes removing a portion of a material on a substrate (90) proximate to a defect using chemical etching (88) in combination with an electron beam (110) and a light beam.
申请公布号 WO2005092025(A3) 申请公布日期 2007.05.18
申请号 WO2005US09324 申请日期 2005.03.22
申请人 KLA-TENCOR TECHNOLOGIES CORP.;NASSER-GHODSI, MEHRAN;BOROWICZ, MARK;BAKKER, DAVE;VAEZ-IRAVANI, MEHDI;AJI, PRASHANT;GARCIA, RUDY, F.;CHUANG, TZU, CHIN 发明人 NASSER-GHODSI, MEHRAN;BOROWICZ, MARK;BAKKER, DAVE;VAEZ-IRAVANI, MEHDI;AJI, PRASHANT;GARCIA, RUDY, F.;CHUANG, TZU, CHIN
分类号 H01L21/00;A61N5/00;G01N1/32;G03C5/00;G03F9/00;G21G5/00;H01J37/30 主分类号 H01L21/00
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