| 摘要 |
The device has two connection electrodes separately arranged opposite to one another on an emitter electrode of an insulated gate bipolar transistor (1). Another two connection electrodes are arranged separately on an anode electrode of a diode. Electrode wiring parts come out from respective side sections of an extraction electrode (4), where the parts are electrically connected only with the respective connection electrodes. An independent claim is also included for a method for manufacturing a semiconductor device. |
