发明名称 |
Method for manufacturing a semiconductor component that inhibits formation of wormholes |
摘要 |
A method for manufacturing a semiconductor component that inhibits formation of wormholes in a semiconductor substrate. A contact opening is formed in a dielectric layer disposed on a semiconductor substrate. The contact opening exposes a portion of the semiconductor substrate. A sacrificial layer of oxide is formed on the exposed portion of the semiconductor substrate and along the sidewalls of the contact opening. Silane is reacted with tungsten hexafluoride to form a hydrofluoric acid vapor and tungsten. The hydrofluoric acid vapor etches away the sacrificial oxide layer and a thin layer of tungsten is formed on the exposed portion of the semiconductor substrate. After forming the thin layer of tungsten, the reactants may be changed to more quickly fill the contact opening with tungsten.
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申请公布号 |
US7217660(B1) |
申请公布日期 |
2007.05.15 |
申请号 |
US20050109964 |
申请日期 |
2005.04.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG CONNIE PIN-CHIN;BESSER PAUL R.;YIN JINSONG;PHAM HIEU T.;NGO MINH VAN |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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