发明名称 |
HETEROSTRUKTUR MIT RÜCKSEITIGER DONATORDOTIERUNG |
摘要 |
The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated. |
申请公布号 |
AT359602(T) |
申请公布日期 |
2007.05.15 |
申请号 |
AT20010964955T |
申请日期 |
2001.06.01 |
申请人 |
MICROGAN GMBH |
发明人 |
KOHN, ERHARD;DAUMILLER, INGO;KAMP, MARKUS;SEYBOTH, MATTHIAS |
分类号 |
H01L29/812;H01L21/338;H01L27/095;H01L29/20;H01L29/36;H01L29/778 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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