发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of writing errors in a write and autoprecharge mode, while increasing the speed of the operations and the clock frequency. SOLUTION: When a write and autoprecharge command is fetched, a CPSRX and an AUTPL become 'H'. When a column operation is completed, the CPSRX becomes 'L'. When the CPSRX='L' and the AUTPL='H', and a CSLCK='H' holds, an autoprecharge enable signal AUTPE becomes 'H'. When the CSLCK is 'H', AUTPE becomes 'H', and AUTPE with not depend on the leading edge of an external clock VCLK. Since the autoprecharge takes place, when a column select line CSL is put in an active state, the falling time of a word line will not depend on the external clock frequency and is always made a constant.
申请公布号 JP2002015570(A) 申请公布日期 2002.01.18
申请号 JP20000195173 申请日期 2000.06.28
申请人 TOSHIBA CORP 发明人 OTAKE HIROYUKI
分类号 G11C11/407;G11C7/10;G11C11/409;G11C11/4091 主分类号 G11C11/407
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