| 摘要 |
<p>It is possible to provide a low-cost semiconductor pressure sensor of a simple structure capable of easily controlling, for example, the thickness of its diaphragm portion, and having a high yield, a low dependence on temperature, and a high sensitivity. The semiconductor pressure sensor comprises a Schottky barrier diode (10) consisting of a barrier film (1), an electrode film (2), and an n-type semiconductor substrate (3), and a base (4). In the Schottky barrier diode (10), the barrier film (1) formed of a metal is brought into contact with the n-type semiconductor substrate (3), so that a depletion layer is formed in the contact area on the side of the n-type semiconductor substrate (3) and a Schottky barrier is generated. This Schottky junction portion is included in the diaphragm portion (5) in the n-type semiconductor substrate (3) and functions as a pressure sensing area.</p> |
