| 发明名称 |
Flash memory cell and methods for fabricating same |
| 摘要 |
A split gate flash memory cell having floating gates with sharp, upwardly flared corners, protective caps of dielectric material which are substantially square or rectangular in cross-section, and elongated and thin Vss dielectric spacers disposed along substantially planar side walls defined by the floating gates and the protective caps.
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| 申请公布号 |
US7214589(B2) |
申请公布日期 |
2007.05.08 |
| 申请号 |
US20040803448 |
申请日期 |
2004.03.18 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU YUAN-HUNG;TU YEUR-LUEN |
| 分类号 |
H01L21/336;H01L21/8238;H01L21/8247;H01L27/115;H01L29/423;H01L29/788 |
主分类号 |
H01L21/336 |
| 代理机构 |
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