发明名称 MOS type semiconductor integrated circuit device
摘要 A plurality of MOS type circuits is provided, and are connected in a multistage manner. A first transistor is inserted between a power source voltage VDD and a power supply node of each of MOS type circuits at an odd numbered stage. A second transistor is inserted between the power source voltage VDD and a power supply node of each of MOS type circuits at an even numbered stage. When the plurality of MOS type circuits are established in a standby state, a control circuit first controls to make a second transistor conductive, and then make a first transistor conductive when the plurality of MOS type circuits, each of which is established in a standby state, are recovered from the standby state to an active state.
申请公布号 US7215178(B2) 申请公布日期 2007.05.08
申请号 US20050251824 申请日期 2005.10.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KUSHIDA KEIICHI;HIRABAYASHI OSAMU
分类号 G05F1/10 主分类号 G05F1/10
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