| 摘要 |
An exemplary method for fabricating a thin film transistor (TFT) array substrate ( 200 ) includes: forming a transparent conductive layer ( 202 ) and a gate metal layer ( 203 ) on an insulating substrate ( 201 ); forming a photo-resist layer ( 231 ) on the gate metal layer; exposing the photo-resist layer using a photo-mask with a predetermined pattern; developing the photo-resist layer to form a photo-resist pattern; and etching the transparent conductive layer and the gate metal layer using the photo-resist pattern as a mask to form a plurality of gate electrodes ( 213 ) and a plurality of pixel electrodes ( 212 ). Compared to the conventional method, in the above-described exemplary method for fabricating the TFT array substrate, only one photo-mask process is used to form the gate electrodes and the pixel electrodes, thus saving one photo-mask process. Therefore, a simplified method at a reduced cost is provided. |
