发明名称 Methods of generating planar double gate transistor shapes and data processing system readable media to perform the methods
摘要 A method of generating a layout of one or more planar double gate transistors can include generating a single gate transistor layout at least in part from one or more double gate transistor circuits, logic diagrams, or any combination thereof, and generating the planar double gate transistor layout at least in part from the single gate transistor layout. The method is highly flexible regarding the generation and adjusting of gate shapes and gate contact shapes to ensure the proper connection of the gates to voltage or signal lines, and when such generation, adjusting, or any combination thereof is performed. In one embodiment, a data processing system can include a program that has code in the form of instructions to carry out the method.
申请公布号 US2007093029(A1) 申请公布日期 2007.04.26
申请号 US20050258777 申请日期 2005.10.26
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 DAO THUY B.
分类号 H01L21/336;H01L29/76;H01L29/94;H01L31/00 主分类号 H01L21/336
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