发明名称 FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of selectively depositing a thin film on a substrate of a large area without using any shadow mask. SOLUTION: An evaporation source 100 comprises a cylindrical cell 128, a lower heater 134 and an upper heater 136 for heating the cylindrical cell. A heating plate 130 is capable of controlling the temperature by a heater 138 provided on the inner side thereof. The heating plate 130 heats a vapor deposition material to be fed into the cylindrical cell 128 from a material feed unit 102 connected thereto, and vaporizes the vapor deposition material by evaporation or sublimation. A rotating mechanism 132 for rotating the heating plate 130 in the cylindrical cell 128 may be provided to unify the temperature therein. A heater 140 for heating the material feed unit 102 may be provided to raise the temperature of the vapor deposition material to be fed in the cylindrical cell 128. The evaporation source 100 is capable of continuously performing the film deposition with excellent uniformity on a substrate of a large area. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007107047(A) 申请公布日期 2007.04.26
申请号 JP20050298879 申请日期 2005.10.13
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ARAI YASUYUKI
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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