发明名称 Semiconductor memory device
摘要 An internal address generating circuit sequentially generates internal addresses in the burst read operation, with an external address being set as an initial value. A memory core has plural memory cells and sequentially outputs, in response to activation of a column selection signal, data read from the memory cells corresponding to the internal addresses in the burst read operation. In the burst read operation, a column control circuit in a memory core control circuit repeats activation of the column selection signal for a certain period during an activation period of an external control signal and forcibly deactivates the column selection signal in synchronization with deactivation of the external control signal. In the burst read operation, an operation state control circuit in the memory core control circuit deactivates an operation state control signal after a predetermined time has elapsed from the deactivation of the external control signal.
申请公布号 US2007091715(A1) 申请公布日期 2007.04.26
申请号 US20060340471 申请日期 2006.01.27
申请人 FUJITSU LIMITED 发明人 HARA KOTA;KIKUTAKE AKIRA
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
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