发明名称 |
Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device |
摘要 |
This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric film; performing a second treatment of making a sidewall of the dielectric film formed by etching the dielectric film hydrophobic; and performing a third treatment of removing a silicon residue generated by etching the dielectric film.
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申请公布号 |
US2007082491(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
US20060545515 |
申请日期 |
2006.10.11 |
申请人 |
UOZUMI YOSHIHIRO;TAKASE KAZUHIKO;MATSUMURA TSUYOSHI |
发明人 |
UOZUMI YOSHIHIRO;TAKASE KAZUHIKO;MATSUMURA TSUYOSHI |
分类号 |
H01L21/461;H01L21/302 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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