发明名称 HIGH THROUGHPUT CRYSTALLIZATION OF THIN FILMS
摘要 <p>Under one aspect, a method of processing a film includes defining a plurality of spaced-apart regions to be crystallized within a film, the film being disposed on a substrate and capable of laser-induced melting; generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a length and a width; continuously scanning the film in a first scan with a sequence of laser pulses at a velocity selected such that each pulse irradiates and melts a first portion of a corresponding spaced-apart region, wherein the first portion upon cooling forms one or more laterally grown crystals; and continuously scanning the film in a second time with a sequence of laser pulses at a velocity selected such that each pulse irradiates and melts a second portion of a corresponding spaced-apart region, wherein the first and second portions in each spaced-apart region partially overlap, and wherein the second portion upon cooling forms one or more laterally grown crystals that are extended relative to the one or more laterally grown crystals of the first portion.</p>
申请公布号 WO2007022302(A3) 申请公布日期 2007.04.12
申请号 WO2006US32037 申请日期 2006.08.16
申请人 THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK;IM, JAMES, S. 发明人 IM, JAMES, S.
分类号 H01L21/20 主分类号 H01L21/20
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