| 摘要 |
PROBLEM TO BE SOLVED: To provide a liquid composition for removing a photoresist residue and a polymer residue, with which the photoresist residue and an ashing residue remaining after dry etching and ashing are removed, in a manufacturing step of a semiconductor device having copper and a copper alloy comprising copper as a main component, and various low dielectric constant films. SOLUTION: The liquid for removing the residue remaining on a semiconductor substrate after dry etching and ashing treatment, in the manufacturing step of a semiconductor circuit element having copper and the copper alloy as a wiring material, is characterized by containing hydrofluoric acid and not containing any inorganic alkali except for an inorganic fluoride, any organic alkali, and any water-soluble organic amine. COPYRIGHT: (C)2007,JPO&INPIT
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