发明名称 |
MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>A magnetic memory device includes a pinning layer, a pinned layer, an insulation layer, which are sequentially stacked on a semiconductor substrate. The magnetic memory device further includes a free layer disposed on the insulation layer, a capping layer disposed on the free layer and an MR (magnetoresistance) enhancing layer interposed between the free layer and the capping layer. The MR enhancing layer is formed of at least one anti-ferromagnetic material.</p> |
申请公布号 |
KR100706806(B1) |
申请公布日期 |
2007.04.05 |
申请号 |
KR20060008675 |
申请日期 |
2006.01.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, SE CHUNG;LEE, JANG EUN;KIM, HYUN JO;NAM, KYUNG TAE;JEONG, JUN HO |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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