| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOSFET of gallium nitride material that comprises a vertical structure. SOLUTION: The gallium nitride substrate 13 comprises a first region 13c that has the dislocation density higher than the first dislocation density, and a second region 13d that has a dislocation density lower than the first dislocation density. A gallium nitride semiconductor region 15 comprises a first region 15c having a dislocation density higher than the second dislocation density, and a second region 15d having a dislocation density lower than the second dislocation density. The first region 15c is positioned above the first region 13a, and the second region 15d is positioned above the second region 13d. A source electrode 17 and a Schottky gate electrode 19 are provided on the main surface 15a of the gallium nitride semiconductor region 15. A drain electrode 21 is provided on the other surface 13b of the gallium nitride substrate 13, being positioned above the first and second regions 13c and 13d. COPYRIGHT: (C)2007,JPO&INPIT |
