发明名称 |
INTEGRATED CIRCUIT CAPACITOR STRUCTURE |
摘要 |
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
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申请公布号 |
US2007072319(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20060559317 |
申请日期 |
2006.11.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN JEONG-HOON;LEE KYUNGTAE;JUNG MU-KYUNG;LEE YONG-JUN |
分类号 |
H01L21/3205;H01L21/66;G01R31/26;H01G4/00;H01L21/02;H01L21/28;H01L21/331;H01L21/768;H01L21/82;H01L21/822;H01L21/8242;H01L23/522;H01L27/04;H01L27/08;H01L27/108 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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