发明名称 |
Ohmic contact on p-type GaN |
摘要 |
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
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申请公布号 |
US2007069380(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20050234993 |
申请日期 |
2005.09.26 |
申请人 |
MILLER JEFFREY N;BOUR DAVID P;ROBBINS VIRGINIA M;LESTER STEVEN D |
发明人 |
MILLER JEFFREY N.;BOUR DAVID P.;ROBBINS VIRGINIA M.;LESTER STEVEN D. |
分类号 |
H01L23/48;H01L33/14;H01L33/32 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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