发明名称 METHOD OF FABRICATING SHALLOW TRENCH ISOLATION STRUCTURE
摘要 A method of fabricating a shallow trench isolation structure is provided. A substrate having a patterned pad layer is provided. A part of the substrate is removed by using the patterned pad layer as a mask and a trench is thus formed in the substrate. A first insulation layer is formed on the substrate, the patterned pad layer and the trench. A second insulation layer is formed on the first insulation layer and partially fills into the trench. A third insulation layer is formed on the substrate and fills in the trench. The third insulation layer on the patterned pad layer and the patterned pad layer are removed subsequently.
申请公布号 US2007072387(A1) 申请公布日期 2007.03.29
申请号 US20050164546 申请日期 2005.11.29
申请人 LAI SU-CHEN;HSIAO CHIA-SHUN 发明人 LAI SU-CHEN;HSIAO CHIA-SHUN
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址