发明名称 |
METHOD OF FABRICATING SHALLOW TRENCH ISOLATION STRUCTURE |
摘要 |
A method of fabricating a shallow trench isolation structure is provided. A substrate having a patterned pad layer is provided. A part of the substrate is removed by using the patterned pad layer as a mask and a trench is thus formed in the substrate. A first insulation layer is formed on the substrate, the patterned pad layer and the trench. A second insulation layer is formed on the first insulation layer and partially fills into the trench. A third insulation layer is formed on the substrate and fills in the trench. The third insulation layer on the patterned pad layer and the patterned pad layer are removed subsequently.
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申请公布号 |
US2007072387(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20050164546 |
申请日期 |
2005.11.29 |
申请人 |
LAI SU-CHEN;HSIAO CHIA-SHUN |
发明人 |
LAI SU-CHEN;HSIAO CHIA-SHUN |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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