CIRCUIT SIMULATION METHOD AND CIRCUIT SIMULATION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide environment allowing high-accuracy circuit simulation by extracting a model parameter which describes characteristics of a transistor with high accuracy. SOLUTION: This circuit simulation method has: a means 1 extracting a primary model parameterαfrom device characteristic measurement data; a means 2 performing primary circuit simulation processing by use of the primary model parameterα, and recording an actual operation terminal voltage condition c1 of a device; a means 3 calculating an extraction error d1 in the operation terminal voltage condition c1 to the device characteristic measurement data; a means 4 extracting an optimized secondary model parameterβpreferentially fitting to the device characteristic measurement data on the operation terminal voltage condition c1 in reference to the extraction error d1; and a means 5 performing secondary circuit simulation processing by use of the secondary model parameterβ. The parameter is optimized on the actual operation terminal voltage condition to reduce design defect caused by the parameter extraction error. COPYRIGHT: (C)2007,JPO&INPIT