| 摘要 |
PROBLEM TO BE SOLVED: To obtain an IGBT having high withstand voltage and low on-state voltage, which is easy to buid as well. SOLUTION: The semiconductor device of the present invention comprises a semiconductor substrate, a first conductivity type-first semiconductor region located in the substrate, a second conductivity type-second semiconductor region located on the first semiconductor region, a plurality of second conductivity type-third semiconductor regions extending to the second semiconductor region and having higher carrier concentration than that of the second semiconductor region, a first conductivity type-fourth semiconductor region located in the third semiconductor regions, a second conductivity type-fifth semiconductor region located in the fourth semiconductor region, a gate insulating film formed on surfaces of the second to the fifth semiconductor regions, a gate electrode formed on the insulating film, an emitter electrode subjected to low-resistance contact to the fourth and fifth semiconductor regions, and a collector electrode subjected to low-resistance contact to the first semiconductor region. As a result, n layer works as a hole barrier and on-state voltage can be reduced as the holes are accumulated in an n<SP>-</SP>layer. COPYRIGHT: (C)2007,JPO&INPIT
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