Premature breakdown in submicron device geometries

摘要

The concept of the present invention describes a semiconductor device with a junction 504 between a lightly doped region 501 and a heavily doped region 502 , wherein the junction has an elongated portion 504 a and curved portions 504 b. The doping concentration of the lightly doped region is configured so that it exhibits higher resistivity in the proximity 510 of the curved portion by an amount suitable to lower the electric field strength during device operation and thus to offset the increased field strength caused by the curved portion. As a consequence, the device breakdown voltage in the curved junction portion becomes equal to or greater than the breakdown voltage in the linear portion.