发明名称 |
MOS type semiconductor device having electrostatic discharge protection arrangement |
摘要 |
In a semiconductor device having an electrostatic discharge protection arrangement, a semiconductor substrate exhibits a first conductivity type. First and second impurity regions each exhibiting a second conductivity type are formed in the semiconductor substrate. A channel region is formed in the semiconductor substrate between the first and second impurity regions. A first conductive area is defined on the first impurity region in the vicinity of the channel region. A second conductive area is defined on the first impurity region so as to be supplied with an electrostatic discharge current. A third conductive area is defined on the first impurity region to establish an electrical connection between the first and second conductive area. At least one heat-radiation area is defined in the third conductive area so as to be at least partially isolated therefrom and thermally contacted with the first conductive area.
|
申请公布号 |
US7196377(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20050111797 |
申请日期 |
2005.04.22 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KODAMA NORIYUKI;SAWAHATA KOICHI;HIRATA MORIHISA |
分类号 |
H01L23/62;H01L27/04;H01L21/336;H01L21/822;H01L23/60;H01L27/02;H01L27/06;H01L29/72;H01L29/73;H01L29/74;H01L29/78;H01L31/111 |
主分类号 |
H01L23/62 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|