| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously improve mobility of a P-channel electric field effect transistor and mobility of an N-channel electric field effect transistor by bending a semiconductor chip. SOLUTION: The P-channel electric field effect transistor in which a channel is arranged in parallel to the bending direction of a (100) substrate 11 is formed along a <110> direction, and the N-channel electric field effect transistor in which a channel is arranged in parallel to the bending direction of the (100) substrate 11 is formed along the <110> direction, on the (100) substrate 11 bent into a concave shape along the <110> direction. A gate cap film 15 for applying a tensile stress F1' larger than a compression stress by bending of the (100) substrate 11 is formed on the N-channel field effect transistor. COPYRIGHT: (C)2007,JPO&INPIT
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