| 摘要 |
PROBLEM TO BE SOLVED: To form a ridge stripe structure, to proceed digging of a nitride semiconductor growth layer formed on a substrate in an arbitrary depth by etching with sufficient precision to an arbitrary depth without inclining by the crystallinity of the nitride semiconductor growth layer. SOLUTION: Between a p-type GaN contact layer 27 comprising a nitride semiconductor layer 20 formed on an n-type GaN substrate 11 and a p-type Al<SB>0.05</SB>Ga<SB>0.95</SB>N clad layer 26, a p-type Al<SB>0.2</SB>Ga<SB>0.8</SB>N layer of the thickness 0.005μm, and an etching marker layer 30 having a super lattice structure equipped with a portion of ten periodic structures whose one periodic structure is made of a p-type GaN layer of the thickness 0.02μm is disposed. Based on the thickness of a portion of one period of the periodic structure of the etching marker layer 30 measured in advance and an etching rate calculated from the periods of plasma luminescence due to Al generated periodically in the digging by the etching, the etching time and the etching depth are controlled. COPYRIGHT: (C)2007,JPO&INPIT
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