| 摘要 |
A solid state imaging device includes a floating diffusion layer, a reset drain, and an absorption drain formed in a semiconductor substrate. The solid state imaging device further includes a charge transfer section to transfer electric charge into the layer in response to a clock signal; a reset transistor to transfer the electric charge from the layer into the reset drain in response to a Pulse signal; a barrier transistor to transfer the electric charge from the reset drain into the absorption drain; a boosting circuit to bias the absorption drain to a predetermined voltage based on the clock signal; a timing control circuit to stop supply of the clock signal to the boosting circuit and the charge transfer section, and to restart supply of the pulse signal to the reset transistor at a time prior to restart of the supply of the clock signal at a second time.
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