发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE STAGE USED FOR THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of making the temperature of a wafer on a susceptor uniform even in the case of applying precoat on the susceptor supporting the wafer, and provide the susceptor used for the same. SOLUTION: An annular recess part 12a is formed in the circumference of the center part of a wafer supporting surface of a susceptor 12. The recess part 12a is formed as a groove between a central projection part 12b at the center part of the susceptor 12 and a peripheral projection part 12c of the peripheral part of the susceptor 12. By this recess part 12a, a space allowing the temperature within the surface of the supported wafer W to be uniform according to the pressure in the chamber is formed between the mounted wafer W and the susceptor 12. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007067394(A) 申请公布日期 2007.03.15
申请号 JP20060214444 申请日期 2006.08.07
申请人 TOKYO ELECTRON LTD 发明人 MURAKAMI MASASHI;OGOSE HIROSHI
分类号 H01L21/683;C23C16/458;C23C16/46;H01L21/285 主分类号 H01L21/683
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