发明名称 System for situ photoresist thickness characterizaton
摘要 An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.
申请公布号 US2007056513(A1) 申请公布日期 2007.03.15
申请号 US20060599221 申请日期 2006.11.13
申请人 SHIRLEY PAUL D;HICKMAN CRAIG 发明人 SHIRLEY PAUL D.;HICKMAN CRAIG
分类号 B05C11/00;B05C13/02;B05D3/12;C23C16/52;G03C5/00;G03F7/16;H01L21/66 主分类号 B05C11/00
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