发明名称 Method of manufacturing a semiconductor device
摘要 The compound of the present invention is represented by the following formula 1: wherein R<SUP>1</SUP>, R<SUP>2</SUP>, R<SUP>4</SUP>, R<SUP>5</SUP>, m0 to m2, and n0 to n2 are as defined in the description. Radiation sensitive compositions containing the compound of the formula 1 as a main component of the solid component are excellent in sensitivity, resolution, heat resistance, etching resistance, and solubility in solvent.
申请公布号 US2007059632(A1) 申请公布日期 2007.03.15
申请号 US20040570855 申请日期 2004.08.30
申请人 OGURO DAI;ECHIGO MASATOSHI 发明人 OGURO DAI;ECHIGO MASATOSHI
分类号 G03C1/00;C07D311/82;G03F7/039 主分类号 G03C1/00
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