发明名称 SOURCE FOR INORGANIC LAYER AND THE METHOD FOR CONTROLLING HEATING SOURCE THEREOF
摘要 An inorganic deposition source which improves deposition efficiency, prevents condensation phenomenon of a nozzle, and enables accurate temperature control by minimizing a stabilization reaching time of the deposition rate and a method for controlling a heating source of the inorganic deposition source are provided. An inorganic deposition source(100) comprises: a crucible(10) which is disposed within a deposition chamber to evaporate a metal or an inorganic material contained in the crucible; a heating part(30) including a heating source for supplying heat to the crucible; a housing(50) for blocking heat emitted from the heating part; an outer wall(70) on which the crucible is placed; and a nozzle part(90) for injecting a material evaporated from the crucible, wherein the heating part comprises a first electric power source formed on an upper part of the crucible to supply electric power to an upper heating part, and a second electric power source formed on a lower part of the crucible to supply electric power to a lower heating part. The heating part comprises a plate-like heater, a support, a reflector, an insulator and a cooling jacket part.
申请公布号 KR20070025163(A) 申请公布日期 2007.03.08
申请号 KR20050080996 申请日期 2005.08.31
申请人 SAMSUNG SDI CO., LTD. 发明人 JEONG, MIN JAE;CHOI, YOUNG MOOK;KIM, DO GEUN
分类号 C23C14/26 主分类号 C23C14/26
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