SOLUTION FOR IMMERSION EXPOSURE AND IMMERSION EXPOSURE METHOD

摘要

The object is to resolve a fine pattern with a narrower line width/line space by immersion exposure technology in the manufacture of a semiconductor or the like. A solution for use in immersion exposure comprising a saturated hydrocarbon compound as the main ingredient, wherein the content of an impurity or impurities having an unsaturated bond or a heteroatom in its structure in the solution is as follows: (i) 2 µg/mL or less in total for a compound having a conjugated unsaturated bond; (ii) 30 µg/mL or less in total for a compound having no conjugated unsaturated bond but having a non-conjugated unsaturated bond; (iii) 15 µg/mL or less in total for an amine having no unsaturated bond; and (iv) 100 µg/mL or less in total for a heterocyclic compound, an alcohol, an ether and a haloganated compound other than the compound defined in any one of (i) to (iii).