SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device allowing improvement in light extraction efficiency and to provide its manufacturing method.

SOLUTION: An AlGaInP light emitting layer 5 is overlaid with an Al0.6Ga0.4As current diffusion layer 3 and an n-type Al0.5In0.5P cladding layer 4. The AlGaInP light emitting layer 5 is overlaid with a p-type Al0.5In0.5P cladding layer 6 and a p-type GaInP intermediate layer 7 and a p-type GaP contact layer 8. The p-type GaP contact layer 8 is pasted with a p-type GaP translucent substrate 9 having lower carrier concentration than that of the p-type GaP contact layer 8.

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