THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

A TFT is provided to form a TFT having an excellent electrical characteristic by minimizing the density of a metal catalyst remaining in a semiconductor layer. At least one capping layer is positioned on a substrate. A semiconductor layer(200) is formed on the at least one capping layer. A gate insulation layer(210), a gate electrode(220), an interlayer dielectric(230) and a source/drain electrode(240) are formed on the semiconductor layer. A buffer layer is formed between the capping layer and the substrate. A metal catalyst can exist in the capping layer. The semiconductor layer can a polycrystalline silicon layer crystallized by an SGS(super grain silicon) crystallization method.