| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of securely removing a residual halogen without a resistance of a conductive film lowered when etching the conductive film including a silicon by a halogen series gas. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of etching the conductive film by the plasma of a gas including a halogen or a halogen compound, and removing the residual halogen on a substrate by the plasma of the gas without hydrogen terminating the dangling bond existing on the conductive film. The gas used in removing the residual halogen can be, for instance, a gas mainly comprising an oxygen gas as a main component. The conductive film comprises, for instance, a polysilicon film. COPYRIGHT: (C)2007,JPO&INPIT
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