发明名称 |
Memory devices with memory cell transistors having gate sidewell spacers with different dielectric properties |
摘要 |
A memory device, such as a DRAM, SRAM or non-volatile memory device, includes a substrate, a gate electrode disposed on the substrate, and source and drain regions in the substrate adjacent respective first and second sidewalls of the gate electrode. First and second sidewall spacers are disposed on respective ones of the first and second sidewalls of the gate electrode. The first and second sidewall spacers have different dielectric constants. The first and second sidewall spacers may be substantially symmetrical and/or have substantially the same thickness.
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申请公布号 |
US7183662(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20040911907 |
申请日期 |
2004.08.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM GYU-CHUL;KIM SUNG-BONG |
分类号 |
H01L27/108;H01L29/76;H01L21/28;H01L21/336;H01L21/8242;H01L21/8244;H01L21/8247;H01L27/11;H01L27/115;H01L29/49;H01L29/78;H01L29/788;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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