| 摘要 |
A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cl<SUB>2 </SUB>and HBr. Trenches 104 a , 104 b are formed, as shown in FIG. 1 B, in a silicon wafer 101 shown in FIG. 1 A through a mask layer such as a nitride silicon layer 103 . While adjusting the high-frequency power supplied to the opposed electrode where the wafer is placed, the shape of the sidewalls 105 a , 105 b of the trenches 104 a , 104 b is controlled. Thus, the trenches can have desired shapes even if the widths of the trenches are different.
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