发明名称 |
Methods of forming SRAM cells having landing pad in contact with upper and lower cell gate patterns |
摘要 |
SRAM cells having landing pads in contact with upper and lower cell gate patterns, and methods of forming the same are provided. The SRAM cells and the methods remove the influence resulting from structural characteristics of the SRAM cells having vertically stacked upper and lower gate patterns, for stably connecting the patterns on the overall surface of the semiconductor substrate. An isolation layer isolating at least one lower active region is formed in a semiconductor substrate of the cell array region. The lower active region has two lower cell gate patterns. A body pattern is disposed in parallel with the semiconductor substrate. The body pattern is formed to confine an upper active region, which has upper cell gate patterns on the lower cell gate patterns. A landing pad is disposed between the lower cell gate patterns. A node pattern is formed to simultaneously contact the upper cell gate pattern and the lower cell gate pattern.
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申请公布号 |
US2007042554(A1) |
申请公布日期 |
2007.02.22 |
申请号 |
US20060589618 |
申请日期 |
2006.10.30 |
申请人 |
KIM SUNG-JIN;JUNG SOON-MOON;CHO WON-SEOK;JANG JAE-HOON;KWAK KUN-HO;KIM JONG-HYUK;SHIM JAE-JOO |
发明人 |
KIM SUNG-JIN;JUNG SOON-MOON;CHO WON-SEOK;JANG JAE-HOON;KWAK KUN-HO;KIM JONG-HYUK;SHIM JAE-JOO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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