Method for etching high dielectric constant materials

摘要

In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl₃. The high k dielectric material may include Al₂O₃ in a stack having a silicon layer. The etching may include supplying a passivation gas, for example C₂H₄, and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process.