CRYSTAL GROWTH APPARATUS AND CRYSTAL PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a crystal growth apparatus for growing a group III element-nitride crystal while preventing alkali metals from evaporating outside.

SOLUTION: A reaction vessel 10 holds the mixed melt 180 of metals Na and Ga, and an external reaction vessel 20 covers the circumference of the vessel 10. Piping 30 is connected to the external vessel 20 at the lower side of the vessel 10, and a porous plug 40 is fixed into the piping 30 at the side lower than the connection part of the vessels 10 and 20. A gas cylinder 120 supplies nitrogen gas to the piping 30 through a pressure controller 110. The porous plug 40 and a metal melt 170 prevent the metal Na vapor which is evaporated from mixed melt 180 from diffusing into the piping 30, and the nitrogen gas in the piping 30 is supplied into the spaces 13 and 21 by the difference between the pressure in the spaces 13 and 21, and that in a space 31.

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