| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a structure to assure blowing of an electric fuse at the time of blowing the fuse, and also to provide a highly reliable semiconductor device in the structure not generating breakdown of an electric fuse element which is not blown with a transient current at the time read operation. SOLUTION: The semiconductor device comprises an active region (2) surrounded by an element isolating region (3) on a substrate (1), and a fuse element (5) which is formed on the substrate (1) crossing the active region (2) by forming an insulating film (5a), a semiconductor layer (5b), and a silicide layer (5c) on this sequence. A first semiconductor region (4) located just under the fuse element (5) in the active region (2) and a second semiconductor region (2a) located at the lower part of both sides of the fuse element (5) in the active region (2) have the same conductivity type. COPYRIGHT: (C)2007,JPO&INPIT
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