发明名称 |
Light emitting device and manufacturing method therefor |
摘要 |
<p>To provide a light emitting element having a top emission structure, which can be easily manufactured without considering an ionization potential of an electrode (particularly an electrode in contact with a substrate) and a manufacturing method therefor. A light emitting device having the top emission structure according to the present invention includes: a first electrode (101) formed of general-purpose metal (specifically, a wiring material such as Ti or Al) having a light-shielding property or reflectivity; a conductive polymer layer (102) formed by applying a conductive polymer material onto the first electrode (101); an electroluminescence film (103) formed in contact with the conductive polymer layer (102); and a light-transmissive second electrode (104) formed on the electroluminescence film 103, in which the conductive polymer layer (102) is formed of materials including a redox polymer etc., while being free of problems regarding work function (as shown in Fig. 1A).
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申请公布号 |
EP1376714(A3) |
申请公布日期 |
2007.02.14 |
申请号 |
EP20030014751 |
申请日期 |
2003.06.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SEO, SATHOSHI;YAMAZAKI, HIROKO |
分类号 |
H05B33/26;H01L51/00;H01L51/50;(IPC1-7):H01L51/20 |
主分类号 |
H05B33/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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