发明名称 Non-volatile memory device, and control method of non-volatile memory device
摘要 In a memory cell array, aside from a normal-data storing region, a control-information storing region is also allocated, and the control-information storing region is composed of a predetermined number of control-information storing memory cells in each bit of control information, and same bit data is stored in the predetermined number of control-information storing memory cells, and the data is read out simultaneously at the time of reading out. When being read-out the control information, since data is read out simultaneously from the predetermined number of memory cells, the driving capacity of reading route when reading out is reinforced. Reading time of control information being read out at the time of turning on the power or initializing after resetting can be shortened, and the operation can be quickly transferred to normal access action.
申请公布号 US2007033333(A1) 申请公布日期 2007.02.08
申请号 US20060479387 申请日期 2006.06.30
申请人 KATO KENTA;NAGAO MITSUHIRO 发明人 KATO KENTA;NAGAO MITSUHIRO
分类号 G06F12/00 主分类号 G06F12/00
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