| 摘要 |
<p>A complex pattern for monitoring a defect of a semiconductor device is provided to complexly detect and analyze several defects while reducing a chip area occupied by the complex pattern. An active region pattern(12) is defined by a field region(11), and is separated into two parts. A metal wiring pattern(13) is disposed to partially superpose on the active region pattern, with an insulating layer being interposed between the metal wiring pattern and the active region pattern. Two active region pads(14a,14b) are connected to the active region patterns, and two metal wiring pads(15a,15b) are connected to the metal wiring patterns. An active region contact(16) is formed on the insulating layer. A metal wiring contact(17) is selectively formed on the insulating layer.</p> |
