| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To evaluate simply and nondestructively the film thickness of an insulating film on a silicon substrate, in an inspection method of an acceleration sensor wherein glass is anode-jointed to the silicon substrate. <P>SOLUTION: The acceleration sensor 10 is equipped with the silicon substrate 1, glasses 3, 2 anode-jointed to the upper and lower sides of the silicon substrate 1, a silicon oxide film 7 and a silicon nitride film 8 which are insulating films formed on the silicon substrate 1, a cantilever 1a having a cantilever structure formed in the silicon substrate 1, and a piezoresistance 4 formed on the surface of the silicon substrate 1. The sensor is also equipped with an aluminum electrode 6 used also for inspection, provided beforehand on the silicon nitride film 8; and an aluminum electrode 5b conductive to the silicon substrate 1. In the sensor, a capacitance meter 11 is connected between the aluminum electrode 5b and a measuring terminal 6a of the aluminum electrode 6, and a capacitance between the silicon substrate 1 and the aluminum electrode 6 is measured. The film thickness of the insulating films on the silicon substrate 1 can be determined quantitatively, and the quality of the film thickness can be evaluated easily and nondestructively. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
