| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, where improvement in the integration of a semiconductor device is prevented by the unbalance between the area of a p-type MOS transistor and that of an n-type MOS transistor although the areas need to be different due to the difference in carrier mobility for making an operating speed in a CMOS circuit identical. SOLUTION: The semiconductor device is provided with a semiconductor layer (SOI layer) arranged on an SOI substrate, and a gate electrode arranged on the SOI layer. The semiconductor device is also provided with at least a MOS transistor of one type which is normally off by setting the thickness of the SOI layer to have the thickness of a depletion layer due to the work function difference between the gate electrode and the SOI layer larger than the thickness of the SOI layer. COPYRIGHT: (C)2007,JPO&INPIT
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