METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH NITROGEN RICH OXIDE GATE OXIDE

摘要

A method for manufacturing a semiconductor device with a nitrogen rich oxide layer as a gate oxide layer is provided to prevent the degradation of transistor characteristics by curing stably the nitrogen existing at an interface of a double oxide layer structure using an oxidation and removing contaminants using RTP(Rapid Thermal Processing) under an inert gas condition. A first gate oxide layer(23) is formed on a semiconductor substrate(21). The first gate oxide layer is selectively removed from a core region. A second gate oxide layer(25) is selectively formed on the resultant structure. A nitrogen rich oxide layer is formed under the second gate oxide layer. An oxidation is performed on the resultant structure in order to diffuse the nitrogen existing at an interface between first and second gate oxide layers to an upper surface of the substrate. RTP is performed on the resultant structure under an inert gas condition in order to remove contaminants therefrom.