SEMICONDUCTOR DEVICE INCLUDING A STRAINED SUPERLATTICE AND OVERLYING STRESS LAYER AND RELATED METHODS

摘要

A semiconductor device may include a strained superlattice layer (325) including a plurality of stacked groups of layers, and a stress layer above the strained superlattice layer. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.